Third International Conference, Indium Phosphide and Related Materials
Output eye diagram for the lnP/InGaAs laser driver circuit showing modulation of l00mA at 10Gbit/s. examples from Rockwell ... cmaquot; may be readily achieved in practical HBTs with current gains of 50 and a base sheet resistance of a few hundred Q/1]. ... [4] For a more detailed review, see Jalali, B., and Nottenburg, R.N., aquot;Heterostructure Bipolar Transistorsaquot; chapter in aquot;InP and ... 17, August 1982, pp.
| Title | : | Third International Conference, Indium Phosphide and Related Materials |
| Author | : | Trevar Riley, Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers), IEEE Electron Devices Society |
| Publisher | : | - 1991-03 |
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